Abstract
Submicron-size SiC ceramics were sintered to densities >97% of the theoretical density by adding 5wt% in situ-synthesized nano-size SiC and 2wt% AlNRE2O3 (RE = Y, Er). The SiC ceramics showed very low electrical resistivity in an order of 10-4π·m. This low electrical resistivity was attributed to the smaller amount (2 wt%) of sintering additives addition and their microstructural characteristics, i.e., growth of nitrogn-doped SiC grains and the confinment of non-conducting Y- and Er-containing phases in the junction areas. © 2011 The Ceramic Society of Japan.
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Lim, K. Y., Kim, Y. W., Kim, K. J., & Yu, J. H. (2011). Effect of in situ-synthesized nano-size SiC addition on density and electrical resistivity of liquid-phase sintered silicon carbide ceramics. Journal of the Ceramic Society of Japan, 119(1396), 965–967. https://doi.org/10.2109/jcersj2.119.965
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