Diffusion of ion-implanted gold in p-type silicon

Abstract

We report detailed measurements of gold concentration profiles in 〈100〉, p-type silicon. The gold has been introduced by ion implantation and diffused in the temperature range 1073-1473 K and for times ranging from 60 s to 100 h. The resistivity profiles have been converted into gold concentration profiles by using the recently measured value of the entropy factor for the ionization of the gold donor level. The measured profiles and their time dependence can be accounted for by the kick-out diffusion mechanism. The activation energies for the effective diffusion coefficient and for the gold substitutional concentration are 1.7±0.1 and 1.6±0.1 eV, respectively. The resulting flux of silicon self-interstitials is thus described by an activation energy of 3.3±0.1 eV.