Abstract
Favourable conditions for the growth of good quality silicon carbide (SiC) whiskers from rice husk have been discussed in the light of available evidence on the probable growth mechanism and the theoretical understanding of the same. Preliminary results indicate an increase in whisker yield at lower temperatures and coarsening of whiskers with longer duration of conversion. © 1987 Indian Academy of Sciences.
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APA
Radhakrishna Bhat, B. V., & Sanghi, G. P. (1987). Increase in the yield of silicon carbide whiskers from rice husk. Bulletin of Materials Science, 9(4), 295–303. https://doi.org/10.1007/BF02743979
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