Adaptive behaviour of silicon oxide memristive nanostructures

Abstract

The response to electrical pulses of various parameters has been studied for the CMOS-compatible memristive nanostructures on the basis of silicon oxide demonstrating reproducible resistive switching. It is established that an increase in the amplitude or width of a single programming pulse is followed by the gradual decrease in the device resistivity. By applying periodic pulse sequences of different polarity it is possible to obtain both lower and higher resistance states. This adaptive behavior is analogous to synaptic plasticity and considered as one of the main conditions for the application of memristive devices in neuromorphic systems and synaptic electronics.