Observation of dislocation-controlled domain nucleation and domain-wall pinning in single-crystal BaTiO3

Abstract

Electro-mechanical interactions between topological defects and domain walls play a key role in the macroscopic response of bulk and thin-film ferroelectrics. The applications of ferroelectrics are derived from their inherent ability to nucleate new domains and to move the domain walls that separate adjacent domains. Here, we report dislocation-mediated domain nucleation in single-crystal BaTiO3, achieved by dislocations generated via high-temperature uniaxial compression on a notched sample. We also present a direct observation of domain-wall pinning of 90° ferroelastic domain walls by dislocations using in situ transmission electron microscopy. Dense and well-aligned “forest” dislocations, featuring {100}⟨100⟩ slip systems oriented in the out-of-plane [001] direction, exclusively nucleate in-plane domain variants. We reveal that the 90° domain walls are strongly pinned by imprinted dislocations due to the presence of their associated stress fields. Our findings may advance our understanding of the control of defects in ferroelectrics and propose a strategy applicable to both emerging nanoelectronic and bulk applications.