Revisiting the dark matter interpretation of excess rates in semiconductors

6Citations
Citations of this article
8Readers
Mendeley users who have this article in their library.

Abstract

In light of recent results from low-threshold dark matter detectors, we revisit the possibility of a common dark matter origin for multiple excesses across numerous direct detection experiments, with a focus on the excess rates in semiconductor detectors. We explore the interpretation of the low-threshold calorimetric excess rates above 40 eV in the silicon SuperCDMS Cryogenic Phonon Detector and above 100 eV in the germanium EDELWEISS Surface detector as arising from a common but unknown origin, and demonstrate a compatible fit for the observed energy spectra in both experiments, which follow a power law of index a=3.43-0.06+0.11. Despite the intriguing scaling of the normalization of these two excess rates with approximately the square of the mass number A2, we argue that the possibility of common origin by dark matter scattering via nuclear recoils is strongly disfavored, even allowing for exotic condensed matter effects in an as-yet unmeasured kinematic regime, due to the unphysically large dark matter velocity required to give comparable rates in the different energy ranges of the silicon and germanium excesses. We also investigate the possibility of inelastic nuclear scattering by cosmic ray neutrons, solar neutrinos, and photons as the origin, and quantitatively disfavor all three based on known fluxes of particles.

Cite

CITATION STYLE

APA

Abbamonte, P., Baxter, D., Kahn, Y., Krnjaic, G., Kurinsky, N., Mandava, B., & Wagner, L. K. (2022). Revisiting the dark matter interpretation of excess rates in semiconductors. Physical Review D, 105(12). https://doi.org/10.1103/PhysRevD.105.123002

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free