Biaxial compressive strain engineering in graphene/boron nitride heterostructures

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Abstract

Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inhomogeneous. Finite element modeling suggests that the strain is concentrated on the edges with regular nano-scale wrinkles, which could be a playground for strain engineering in graphene. Raman spectroscopy and mapping is employed to quantitatively probe the magnitude and distribution of strain. From the temperature-dependent shifts of Raman G and 2D peaks, we estimate the TEC of graphene from room temperature to above 1000K for the first time. © 2012 Macmillan Publishers Limited. All rights reserved.

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Pan, W., Xiao, J., Zhu, J., Yu, C., Zhang, G., Ni, Z., … Wang, X. (2012). Biaxial compressive strain engineering in graphene/boron nitride heterostructures. Scientific Reports, 2. https://doi.org/10.1038/srep00893

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