Giant magnetoresistance near the magnetostructural transition in Gd5(Si1.8Ge2.2)

Abstract

Zero-field electrical resistivity over the temperature range of 4-300 K and magnetoresistance in magnetic fields of up to 12 T have been measured in Gd5(Si1.8Ge2.2). This system undergoes a first-order magnetostructural transition at TC≅240K, from a high-temperature paramagnetic to a low-temperature ferromagnetic phase, accompanied by a large drop in the resistivity. The application of an external magnetic field above TC can induce this transition, and a giant negative magnetoresistance effect (Δρ/ρ≅-20%) is observed associated with this first-order field-induced transition. © 1998 American Institute of Physics.