Photonic band structure of oxidized macroporous silicon

Abstract

We investigated theoretically the effect of surface silicon oxide layer on the photonic band structure of a macroporous silicon photonic crystal. Using the plain wave method we have shown that the bandgap in oxidized structure is shifted to the higher frequencies relative to non-oxidized case. We also demonstrate that comparatively wide absolute bandgap can be obtained for low air filling fractions by using thick SiO2 layer. As an example of possible application of such three-component systems, we have shown the concept of a selector of electromagnetic modes based on our calculations.