Impact of Interfacial SiO2 on Dual Ion Beam Sputtered Y2O3-Based Memristive System

Abstract

In this article, the effect of the SiO2 layer is demonstrated on dual ion beam sputtered yttria-based memristive devices for the first time. It is found that the effect of thickening of SiO2 layer is extremely detrimental for resistive switching (RS) parameters such as endurance and uniformity of current-voltage characteristics. SiO2 interfacial layer causes the growth of nano stalagmite in the yttria layer. This interfacial layer is also responsible for the origin of pseudo bipolarity in RS characteristics and early failure of the device during endurance testing. The thickness of the SiO2 layer has a positive correlation with deposition temperature and oxygen partial pressure. It is found that the deposition temperature of 300°C and a mixture of Ar:O2 with a ratio of 2:3 shows the best RS characteristics.