Three-dimensional nanofabrication in si using electron beam lithography

Abstract

A new technique for fabricating three-dimensional (3D) nanostructures enables us to create various 3D nanodevices. The technique involves using electron beam (EB) writing from various directions on microstructures. New methods of resist coating on microstructures and etching parallel to the substrate surface make it possible to apply the 3D-EB writing to 3D nanofabrication in various materials, including Si and hard materials. This technique was used to create 3D Si nanostructures at high resolution and with a high fabrication speed and large arbitrariness in the types of 3D structures that can be created. The technique is therefore promising for creating 3D nanodevices in various nanotechnology fields such as nanomechanics and metamaterials.