UV-induced degradation of high-efficiency silicon PV modules with different cell architectures

Abstract

Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV-transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV-induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA-340 fluorescent lamps at 1.24 W·m−2 (at 340 nm) and 45°C through 4.02 MJ·m−2 (2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al-BSF) cells (