Improved the surface roughness of silicon nanophotonic devices by thermal oxidation method

Abstract

The transmission loss of the silicon-on-insulator (SOI) waveguide and the coupling loss of the SOI grating are determined to a large extent by the surface roughness. In order to obtain smaller loss, thermal oxidation is a good choice to reduce the surface roughness of the SOI waveguide and grating. Before the thermal oxidation, the root mean square of the surface roughness is over 11 nm. After the thermal oxidation, the SEM figure shows that the bottom of the grating is as smooth as quartz surface, while the AFM shows that the root mean square of the surface is less than 5 nm.