Thermoelectric properties of Sb-doped Mg2Si prepared by solid-state synthesis

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Abstract

Sb-doped Mg2Si was prepared by solid-state synthesis and thermoelectric properties were examined. All the Sb-doped Mg2Si compounds showed n-type conduction, indicating that the electrical conduction is mainly due to electrons. The electrical conductivity significantly increased and the absolute value of Seebeck coefficient decreased with increasing Sb content because electron concentration considerably increased from ∼10 16 to ∼1020 cm-3 by Sb doping. The thermal conductivity did not changed significantly by Sb doping. The maximum value of thermoelectric figure-of-merit of 0.62 was obtained for Mg2Si:Sb 0.02 at 823 K. © 2011 Ceramic Society of Japan.

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Jung, J. Y., Park, K. H., & Kim, I. H. (2011). Thermoelectric properties of Sb-doped Mg2Si prepared by solid-state synthesis. In IOP Conference Series: Materials Science and Engineering (Vol. 18). https://doi.org/10.1088/1757-899X/18/14/142006

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