Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

Abstract

In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 °C and supply voltage range of 0.4 V-1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 °C. The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed. © 2012 Chinese Physical Society and IOP Publishing Ltd.