Linear CMOS image sensor with time-delay integration and interlaced super-resolution pixel

25Citations
Citations of this article
9Readers
Mendeley users who have this article in their library.
Get full text

Abstract

This paper presents a high frame rate linear scan CMOS image sensor (CIS) with time-delay integration (TDI) technique and interlaced super-resolution (ISR) pixel to increase signal-to-noise ratio (SNR) and horizontal resolution. An adjacent pixel signal transfer (APST) methodology is adopted for efficient wire routing and reducing pixel complexity. 4T-APS is applied in pixel to achieve the snapshot function. A 128×8×2 interlaced super-resolution pixel array with a pitch of 6×6 um2, a fill factor of 26.99%, and 3.3V operation has been designed and fabricated in 0.18-um TSMC 1P6M CIS technology. Two 128×8 linear array are placed in an interlaced form with a half-pixel-pitch shift to achieve the super-resolution output. The measurement results of proposed linear scan sensor with 8 TDI stages and ISR technique demonstrate a SNR improvement of 10.3 dB, double horizontal resolution, and a power dissipation of 4.114uW per column at 1.6kfps. © 2012 IEEE.

Cite

CITATION STYLE

APA

Chang, J. H., Cheng, K. W., Hsieh, C. C., Chang, W. H., Tsai, H. H., & Chiu, C. F. (2012). Linear CMOS image sensor with time-delay integration and interlaced super-resolution pixel. In Proceedings of IEEE Sensors. https://doi.org/10.1109/ICSENS.2012.6411292

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free