Electron tomography of gate-all-around nanowire transistors

Abstract

We present a study of gate-all-around (GAA) Si nanowire transistor structures using high angle annular dark field (HAADF) STEM tomography. Device structures have been prepared in needle shaped samples using a focused ion beam (FIB), in order to allow sample rotation to 80°. Tomograms are presented, both from a full three channel device structure and also from a single wire test structure, without the hydrogen annealing step. It is observed that hydrogen annealing alters the rectangular cross section of the nanowires, narrowing them and smoothing the corners. © 2010 IOP Publishing Ltd.