Two-Dimensional Avalanche Simulation of Collector-Emitter Breakdown

Abstract

A new two-dimensional (2D) transient simulation with the avalanche effect included has been used to study breakdown phenomena in conventional vertical bipolar transistors of n-p-n type. The simulated current responses to voltage ramps show the important difference in speed for the emitter-collector breakdown and collector-base breakdown. DC specified values may be considered too conservative. © 1990 IEEE