Time-resolved spectroscopy of the violet luminescence of undoped AlN

Abstract

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the genetically yellow luminescence of GaN. © 2005 The Materials Research Society.