About the energy levels of GaAs

Abstract

Computer simulation of the properties of the crystal lattice gives to use up to 1010÷1012 atoms. Using the described technique can be obtained from any of these atomic systems, as well as changes in the radii of coordination spheres at various distances. Simultaneously, you can get a number of nearby neighbors, the location of atoms on the coordination sphere. The initial structure is taken compound GaAs. The resulting model is given for different distances from the central atom. There are the distances from one to six. The result is an uneven growth of the number of atoms grouped along the radius of coverage. For the other elements of the possibility of uniform methods increase the number of atoms, such as Ga. We can develop an algorithm for constructing the structure of compound semiconductor-type A 3B5 based on this principle. For example, to the type of A3B5 of semiconductor compounds it is used compound GaAs. © Published under licence by IOP Publishing Ltd.