Photoelectrochemical Characterization of CdSnP2 Crystals

Abstract

Crystals of the II-IV-V 2 chalcopyrite semiconductor, CdSnP 2 , were grown from a tin melt. Photoelectrochemical techniques were used to characterize the properties of this material. Doping level, carrier type, optical transitions, absorption coefficient, and minority carrier diffusion length were determined and compared with values obtained with other techniques. Polysulfide electrolytes were found to be most suitable for the formation of liquid junctions, but did not completely stabilize the material during extended illumination and resulted in the formation of a CdS overlayer. © 1985, The Electrochemical Society, Inc. All rights reserved.