Isothermal capacitance transient spectroscopy

Abstract

A new measurement method for deep levels in semiconductors is demonstrated, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Detailed experiment and analysis by the method in the case of Au-doped Si in dicate that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors. © 1981 The Japan Society of Applied Physics.