Exclusive-OR gate with a single carbon nanotube

Abstract

Carbon nanotubes (CNTs) are now well-established as efficient channels for field-effect transistors (FETs). Logic circuitry based on CNTs have until now been demonstrated by replacing the silicon channel of a conventional metal-oxide-semiconducutor FET by a CNT. We propose a circuit design utilizing the ambipolarity of the Schottky-barrier-type CNT-FET to realize an exclusive-OR (XOR) gate using a single CNT. The merits and limitations of such a CNT-XOR gate with respect to conventional XOR gates are discussed. © 2006 American Institute of Physics.