Influence of boron-doped graphite carbon nitride on the photoelectric properties of perovskite solar cells

Abstract

In recent years, a new type of two-dimensional semiconductor material graphite phase carbon nitride (g-C 3 N 4 ) has been used in photocatalysis, perovskite solar cells, and other fields due to its good photoelectric properties. In this article, we report a method to improve the quality of perovskite films by adding boron-doped graphite phase carbon nitride to the perovskite precursor solution. Compared with the perovskite film prepared by adding the precursor solution of graphite phase carbon nitride, the crystal quality of the perovskite film prepared by adding the precursor solution of boron-doped graphite phase carbon nitride has been improved. Perovskite films are characterized by larger grain sizes and tighter arrangements. The power conversion efficiency (PCE) of the prepared perovskite solar cell (PSC) increased from 10.75% to 12.76%.