Sidewall depletion in nano-patterned Lao/STO heterostructures

Abstract

We have investigated the conductance of nanostructures fabricated from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO3/ SrTiO3 (LAO/STO) interface. Measurements were done at room temperature and at T=4.2 K. Our findings show that the fully industry compatible nano-patterning process conserves the conductivity except for a small temperature dependent sidewall depletion which we attribute to etch damage induced by the dry etching process.