Abstract
Ce:Gd2Si2O7/SiO2 eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7 and SiO2 was observed. Rod-phase was SiO2 and matrix phase was Gd2Si2O7. Ce3+ 4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).
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CITATION STYLE
Kamada, K., Kurosawa, S., Murakami, R., Yokota, Y., Pejchal, J., Ohashi, Y., & Yoshikawa, A. (2015). Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics. In Journal of Physics: Conference Series (Vol. 619). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/619/1/012036
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