A THz scanner based on planar antenna-supplied silicon field-effect transistors

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Abstract

A scanning device for imaging at THz frequencies was designed and constructed. The device comprised a 335~GHz source of radiation, an x-y-z translation stages, a number of optical elements and a detector. The detector was a silicon field-effect transistor supplied with a resonant antenna and a low-noise preamplifier. With a detector response of 10~V/W and a source power of 10~mW we could generate images in a DC mode with a speed limited only by the velocity of the stages movement. © 2012 PhotonicsSociety of Poland.

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Yavorskiy, D., Marczewski, J., Kucharski, K., Kopyt, P., Gwarek, W., Ratajczyk, M., … Lusakowski, J. (2012). A THz scanner based on planar antenna-supplied silicon field-effect transistors. Photonics Letters of Poland, 4(3), 100–102. https://doi.org/10.4302/plp.2012.3.06

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