Growth of Wide-Bandgap Monolayer Molybdenum Disulfide for a Highly Sensitive Micro-Displacement Sensor

Abstract

Two-dimensional (2D) piezoelectric semiconductor materials are garnering significant attention in applications such as intelligent sensing and energy harvesting due to their exceptional physical and chemical properties. Among these, molybdenum disulfide (MoS2), a 2D wide-bandgap semiconductor, exhibits piezoelectricity in odd-layered structures due to the absence of an inversion symmetry center. In this study, we present a straightforward chemical vapor deposition (CVD) technique to synthesize monolayer MoS2 on a Si/SiO2 substrate, achieving a lateral size of approximately 50 µm. Second-harmonic generation (SHG) characterization confirms the non-centrosymmetric crystal structure of the wide-bandgap MoS2, indicative of its piezoelectric properties. We successfully transferred the triangular MoS2 to a polyethylene terephthalate (PET) flexible substrate using a wet-transfer method and developed a wide-bandgap MoS2-based micro-displacement sensor employing maskless lithography and hot evaporation techniques. Our testing revealed a piezoelectric response current of 5.12 nA in the sensor under a strain of 0.003% along the armchair direction of the monolayer MoS2. Furthermore, the sensor exhibited a near-linear relationship between the piezoelectric response current and the strain within a displacement range of 40–100 µm, with a calculated response sensitivity of 1.154 µA/%. This research introduces a novel micro-displacement sensor, offering potential for advanced surface texture sensing in various applications.