Improved emission efficiency of 210-nm deep-ultraviolet aluminum nitride light-emitting diode

Abstract

We describe technology developed to improve the emission efficiency of our aluminum nitride (AlN) deep-ultraviolet light-emitting diode, which has a wavelength of 210 nm: the shortest wavelength ever observed from any semiconductor. The improvement utilizes the unique characteristic that the emission intensity greatly changes depending on the crystal plane of the emitting surface.