Increase of accuracy of capacitance parameters measurements of power semiconductor modules on base IGBT and FRD

Abstract

This investigation presents an overview of questions related to the increase in accuracy of measurements of capacitance parameters of power semiconductor modules when developing a device for automated measurements. Result addresses the matters of circuit engineering of primary components, technical characteristics and software of a meter designed to automate the process of testing of capacitance parameters of power modules based on IGBT (insulated gate bipolar transistors) and FRD (fast recovery diodes). Unit testing results that prove the efficiency of the proposed method of the technical implementation are studied. Software implementation is described; ways to improve software-hardware solution are proposed. The obtained results can be used for automated testing of electric parameters of power semiconductor devices.