Silicon-based materials are widely promising electronic components by the combination with metals in power electronics field. However, bonding metal and silicon-based materials generally requires specific surface modification due to their different chemical bonds. Here, we demonstrate a process for directly bonding metals to silicon-based materials that does not require surface treatment, based on the in situ decomposition of Ag2O paste, forming Ag nanoparticles (AgNPs). We demonstrate sound joints of Ag/silicon-based materials at 300-500 °C with the formation of a silicon oxide interlayer containing AgNPs. We propose that Ag in the interlayer attracted other Ag particles to the interface, playing a unique role in this direct bonding process. This process is suitable for various bonding applications in electronics, as well the fabrication of conducting paths for photovoltaic and other applications.
CITATION STYLE
Matsuda, T., Inami, K., Motoyama, K., Sano, T., & Hirose, A. (2018). Silver oxide decomposition mediated direct bonding of silicon-based materials. Scientific Reports, 8(1). https://doi.org/10.1038/s41598-018-28788-x
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