Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Abstract

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm-3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed. © 2012 Versita Warsaw and Springer-Verlag Wien.