Low temperature assisted phase transitions in thermally evaporated Cu2Se/Ga3Se2/In3Se2 multilayer thin film structure: Raman signatures of a pristine chalcopyrite CuInxGa1-xSe2 structure

Abstract

Copper Indium Gallium Selenide (CIGS) thin film solar cell absorber layers are fabricated by the conventional co-evaporation of metal stack precursors followed by a selenization process at a high-temperature range. The article deals with an alternative approach to fabricate the CIGS layer by sequential evaporation of metal selenides followed by a low-temperature treatment (250 °C) during pre-and post-deposition processes. Our post annealing treatment on substrate heat treated film reported a first-ever pristine CuIn0.7Ga0.3Se2 thin film structure without selenization was reported at a very low temperature. A better microstructure with an enhanced grain growth, preferential (112) plane orientation, and Raman signatures of pristine chalcopyrite without a secondary Cu2-xSe phase at the surface was observed. Electron microscopy studies affirm the polycrystalline nature of film structure. Optical analyses have shown near-optimum values as of standard absorber layers. Crucial optical parameters such as refractive index, static and high-frequency dielectric constants were estimated by different relations. The values are concurrent with the semiconductor scale. These features in a low-temperature range optimistically land them as promising candidates in flexible electronics.