Growth of alternating 〈100〉/〈111〉-oriented II-VI regions for quasi-phase-matched nonlinear optical devices on GaAs substrates

Abstract

We present a technique for fabricating laterally patterned 〈111〉 and 〈100〉-oriented regions of CdTe on GaAs by metalorganic chemical vapor deposition. Patterning of the crystal orientation is important for quasi-phase-matched nonlinear optical frequency conversion in semiconductor waveguides. Scanning electron micrographs and x-ray diffraction analysis are used to confirm the presence of 〈111〉/〈100〉 grating structures. The CdTe layer is shown to be a suitable template to pattern the orientation of subsequently grown wide-band-gap films of ZnSe and ZnTe.