High-Power Operation of Broad-Area Laser Diodes with Gaas and Algaas Single Quantum Wells for Nd: Yag Laser Pumping

Abstract

We have studied in detail the dependencies of the main lasing characteristics on the facet reflectivity for GaAs and AlGaAs single-quantum-well (SQW) separate-confinement heterostructure (SCH) broad-area laser diodes (LD's). We identified conditions for the facet reflectivity to achieve optimum values. Under those conditions, we obtained maximum output powers of 2.9 and 2.6 W for GaAs-SQW and AlGaAs-SQW single-stripe LD's, respectively, for 150 pm stripe width, lasing at about 808 nm under a continuous-wave (CW) condition. Moreover, those LD's have been stably operating for over 2000 h under the condition of 1 W constant output power with automatic power control circuits at 45°C in CW operation. © 1991 IEEE.