Oxygen-related centers in chemical vapor deposition of diamond

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Abstract

Diamond films are grown using microwave-plasma-enhanced chemical vapor deposition (CVD). Some samples are deposited using 0.1% oxygen in the reaction gas mixture. We have measured the cathodoluminescence spectra of these diamond films (at 77 K) and found that there is a significant difference between the samples grown with oxygen and those without oxygen. Some of the impurity-related luminescence peaks are reduced in intensity or disappear when 0.1% oxygen is used. On the other hand, there are new spectral features in the films grown with oxygen. We attribute some of these new features to oxygen-related centers in diamond and conclude that oxygen could incorporate into the diamond lattice during the CVD process.

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Ruan, J., Choyke, W. J., & Kobashi, K. (1993). Oxygen-related centers in chemical vapor deposition of diamond. Applied Physics Letters, 62(12), 1379–1381. https://doi.org/10.1063/1.108685

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