Microdome InGaN-based multiple quantum well solar cells

Abstract

InGaN-based multiple quantum well (MQW) solar cells (SCs) employing the p-GaN microdome were demonstrated to significantly boost the conversion efficiency by 102. The improvements in short-circuit current density (J sc, from 0.43 to 0.54 mA/cm 2) and fill factor (from 44 to 72) using the p-GaN microdome are attributed to enhanced light absorption due to surface reflection suppression. The concept of microdome directly grown during SC epitaxial growth preserving mechanical robustness and wafer-scale uniformity proves a promising way in promoting the photovoltaic performances of SCs without any additional process. © 2012 American Institute of Physics.