Topotaxial growth of Ti2 AlN by solid state reaction in AlNTi (0001) multilayer thin films

Abstract

The formation of Ti2 AlN by solid state reaction between layers of wurtzite-AlN and α-Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2 O3 (0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlNTi interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3 AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2 AlN (0001) after only 5 min. © 2007 American Institute of Physics.