High-speed write error rate evaluation of a voltage-torque magnetic random access memory cell

Abstract

We developed a system for evaluating the write error rate of a voltage-torque magnetic random access memory cell running at 500 kbps, which is two orders of magnitude faster than the conventional system. This performance enhancement was realized by making the following modifications. First, the bias-tee combining the read and write channels in the conventional system was replaced with a high-speed semiconductor analog switch. Second, a custom amplifier/comparator circuit was built to detect the magnetization state at high-speed. It was confirmed that there was no sign of any thermal influence up to 500 kbps.