Al 2 o 3 -based a-IGZO Schottky Diodes for temperature sensing

Abstract

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al 2 O 3 based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21–400 ◦ C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor n, the barrier height φ B , and temperature. The sensitivity of the diode sensors is 0.81 mV/ ◦ C, 1.37 mV/ ◦ C, and 1.59 mV/ ◦ C when the forward current density of the diode is 1 × 10 −5 A/cm 2 , 1 × 10 −4 A/cm 2 , and 1 × 10 −3 A/cm 2 , respectively.