INTEGRATED CIRCUITS: THE CASE FOR GALLIUM ARSENIDE.

Abstract

Researchers have investigated a number of different devices as the basis for building GaAs integrated circuits: the depletion-mode metal-semiconductor field-effect transistor (D-MESFET), the enhancement-mode MESFET (E-MESFET), and the high-electron-mobility transistor (HEMT). The most mature of these devices is the D-MESFET, which has been produced for 10 years. The paper discusses the advances in manufacturing technology of these devices.