52.3: 2.2 Inch qqVGA AMOLED Driven by Si TFT with Active Layer Deposited at Room Temperature

Abstract

We have successfully fabricated 2.2inch AMOLED display using Si TFT with Si channel formed at room temperature (R.T.). The Si channel layer was deposited by ICP CVD at room temperature. Our R.T. Si TFT showed a field‐effect mobility of 0.07cm 2 /Vsec, 6 V of threshold voltage, 2.2 pA of off current, and 1E6 of on‐off ratio. Based on these performances, active matrix backplane was fabricated with Si TFT with a conventional pixel circuit consisting of 2 TFTs and 1 capacitance.