Transferring metallic nano-island on hydrogen passivated silicon surface for nano-electronics

Abstract

In a planar configuration, precise positioning of ultra-flat metallic nano-islands on semiconductor surface opens a way to construct nanostructures for atomic scale interconnects. Regular triangular Au nano-islands have been grown on atomically flat MoS2 substrates and manipulated by STM to form nanometer gap metal-pads connector for single molecule electronics study. The direct assembly of regular shaped metal nano-islands on H-Si(100) is not achievable. Here we present how to transfer Au triangle nano-islands from MoS2 onto H-Si(100) in a clean manner. In this experiment, clean MoS2 substrates are patterned as array of MoS2 pillars with height of 8 μm. The Au triangle nano-islands are grown on top of the pillars. Successful printing transfer of these Au nano-islands from the MoS 2 pillars to the H-Si(100) is demonstrated. © 2009 IOP Publishing Ltd.