Abstract
Results concerning the operation of a new ultrahigh vacuum (UHV) ion- beam assisted deposition system for in situ investigation of ultrahard thin films are reported. A molecular beam epitaxy (MBE) chamber attached to a surface science system (SPEAR) has been redesigned for deposition of cubic- boron nitride thin films. In situ thin film processing capability of the overall system is demonstrated in preliminary studies on deposition of boron nitride films on clean Si (001) substrates, combining thin film growth with electron microscopy and surface characterization, all in situ.
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Bengu, E., Collazo-Davila, C., Grozea, D., Landree, E., Widlow, I., Guruz, M., & Marks, L. D. (1998). In situ growth and characterization of ultrahard thin films. Microscopy Research and Technique, 42(4), 295–301. https://doi.org/10.1002/(SICI)1097-0029(19980915)42:4<295::AID-JEMT8>3.0.CO;2-P
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