Abstract
We examined the electrical injection of spin-polarized electrons into a GaAs-based light-emitting diode structure from a Fe/ GaOx tunnel injector whose electron-charge injection efficiency was comparable to that of a conventional Fe/ n+ -AlGaAs ohmic injector. A high circular polarization of electroluminescence up to 20% was observed at 2 K. The combination of effective spin-and charge-injection efficiencies makes GaO x a promising tunnel barrier for GaAs-based spintronic devices. © 2010 American Institute of Physics.
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CITATION STYLE
Saito, H., Le Breton, J. C., Zayets, V., Mineno, Y., Yuasa, S., & Ando, K. (2010). Efficient spin injection into semiconductor from an Fe/ GaOx tunnel injector. Applied Physics Letters, 96(1). https://doi.org/10.1063/1.3282799
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