Lateral β-Ga2O3 field effect transistors

Abstract

Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap semiconductor with disruptive potential for ultra-low power loss, high-efficiency power applications. The critical field strength is the key enabling material parameter of BGO which allows sub-micrometer lateral transistor geometry. This property combined with ion-implantation technology and large area native substrates result in exceptionally low conduction power losses, faster power switching frequency and even radio frequency power. We present a review of BGO epitaxial materials and lateral field-effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.