Rapid solid phase crystallization of nanocrystalline silicon deposited by electron cyclotron plasma chemical vapor deposition

Abstract

Nanocrystalline silicon films were deposited in an electron cyclotron resonance plasma of Ar +H2+SiH4 on (100) and (111) oriented Si substrates without external heating. Before deposition, the substrates were cleaned in situ in an Ar+H2 plasma. This cleaning process caused surface roughness particularly on (100) substrates. Apparently, the excessive roughness of the interface with (100) Si surface prevented complete crystallization of the subsequently deposited films. In contrast, rapid solid phase crystallization of the films deposited on (111) surfaces occurred at around 1000 °C. © 1996 American Institute of Physics.