Individual GaAs nanorods imaged by coherent X-ray diffraction

Abstract

Using scanning X-ray diffraction microscopy with a spot size of 220 600 nm, it was possible to inspect individual GaAs nanorods grown seed-free through circular openings in a SiNx mask in a periodic array with μ3 m spacing on GaAs[111]B. The focused X-ray beam allows the determination of the strain state of individual rods and, in combination with coherent diffraction imaging, it was also possible to characterize morphological details. Rods grown either in the centre or at the edge of the array show significant differences in shape, size and strain state. © 2009 International Union of Crystallography.