Latest developments in room-temperature semiconductor neutron detectors: Prospects and challenges

Abstract

Semiconductor-based neutron-detectors are characterized by small size, high energy-resolution, good spatial resolution, and stable response (at the depletion voltage). Consequently, these neutron-detectors are important for the fields of nuclear proliferation prevention, oil exploration, monitoring neutron-scattering experiments, cancer treatments, and space radiation effect research. However, there are some well-known problems for conventional silicon-based neutron detectors: low neutron-detection efficiency and limited resistance to radiation. Therefore, critical improvements are needed to enable sufficiently effective and practical neutron detection. To address these problems, direct-conversion neutron detectors as well as wide bandgap semiconductor-based detectors have been developed and studied intensely during the past years. Significant progress with respect to detection efficiency, radiation resistance, and room temperature operation was achieved. This paper reviews the latest research highlights, remaining challenges, and emerging technologies of direct-conversion neutron detectors as well as wide-bandgap semiconductor neutron detectors. This compact review serves as a reference for researchers interested in the design and development of improved neutron detectors in the future.