Observation of negative capacitances in metal-insulator-metal devices based on a -BaTiO3:H

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Abstract

We study capacitance dispersion in hydrogen-doped amorphous barium titanate (a -BaTiO3:H). Negative values of capacitance are observed at very low frequencies (<10 Hz). This behavior is shown to be related to proton and oxygen vacancy conductions. A qualitative model is proposed to explain negative capacitances. It involves the modification of the Schottky barrier at the metal-dielectric interface upon accumulation of mobile protons and oxygen vacancies at electrodes. © 2008 American Institute of Physics.

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El Kamel, F., Gonon, P., Jomni, F., & Yangui, B. (2008). Observation of negative capacitances in metal-insulator-metal devices based on a -BaTiO3:H. Applied Physics Letters, 93(4). https://doi.org/10.1063/1.2966352

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